Datasheet Details
| Part number | 2SB1370 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.35 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1370-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB1370.
| Part number | 2SB1370 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.35 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1370-INCHANGE.pdf |
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|
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·Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1370 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1370 | Power Transistor | Rohm |
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2SB1370 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1370 | PNP Transistors | LGE |
| Part Number | Description |
|---|---|
| 2SB1371 | PNP Transistor |
| 2SB1372 | PNP Transistor |
| 2SB1373 | PNP Transistor |
| 2SB1375 | PNP Transistor |
| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |
| 2SB1341 | PNP Transistor |