2SB1375 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Collector Power Dissipation- : PC= 25 W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A) Complement to Type 2SD2012 Minimum Lot-to-Lot variations for robust device performance a

📥 Download Datasheet

2SB1375 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1375
Manufacturer	Inchange Semiconductor
File Size	207.02 KB
Description	PNP Transistor
Datasheet	2SB1375 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SB1375	Silicon PNP Transistor	Toshiba Semiconductor
2SB1375	SILICON POWER TRANSISTOR	SavantIC
2SB1375	Silicon PNP Transistor	GME
2SB1375	SILICON PNP TRANSISTOR	BLUE ROCKET ELECTRONICS
2SB1370	Power Transistor	Rohm

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SB1370	PNP Transistor
2SB1371	PNP Transistor
2SB1372	PNP Transistor
2SB1373	PNP Transistor
2SB1315	PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type 2SD2012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1375 APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.