2SB1371 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SD2064 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1371 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...