Datasheet Details
| Part number | 2SB1372 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.72 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1372-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1372.
| Part number | 2SB1372 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.72 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1372-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2065 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -12 A 80 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1372 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
IB= -0.5A VBE(on) Base -Emitter On Voltage IC= -5A;
| Part Number | Description |
|---|---|
| 2SB1370 | PNP Transistor |
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| 2SB1373 | PNP Transistor |
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| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |
| 2SB1341 | PNP Transistor |