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2SB1378 - Silicon PNP Transistor

Key Features

  • 0.15 0.7 4.0 0.8 Unit nA µA V V V.
  • 25.
  • 20.
  • 7 90 25.
  • 0.4.
  • 1.2 350 V V MHz VCB =.
  • 10V, IE = 50mA, f = 200MHz VCB =.
  • 10V, IE = 0, f = 1MHz 25 pF Pulse measurement FE1 Rank classification Q 90 ~ 155 R 130 ~ 220 S 180 ~ 350 Rank hFE1 1 Transistor PC.
  • Ta 800.
  • 1.2 Ta=25˚C 700.
  • 1.0 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0.
  • 1.
  • 2.
  • 3.
  • 4.
  • 5.
  • 6 I.

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Datasheet Details

Part number 2SB1378
Manufacturer Panasonic
File Size 39.40 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB1378 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1996 6.9±0.1 Unit: mm 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –25 –20 –7 –1 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45–0.05 +0.1 1 2 3 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 2.5±0.