2SB1371
Overview
- 0±0.3 11.0±0.2
- 0±0.2 3.2
- 0±0.5 15.0±0.2 φ3.2±0.1
- 0±0.2
- 0±0.1 0.6±0.2
- 1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = -120V, IE = 0 VEB = -3V, IC = 0 VCE = -5V, IC = -20mA VCE = -5V, IC = -1A VCE = -5V, IC = -4A VCE = -5V, IC = -4A IC = -4A, IB = - 0.4A VCE = -5V, IC = - 0.5A, f = 1MHz VCB = -10V, IE = 0, f = 1MHz 15 150 20 60 20 -1.8 -2.0 V V MHz pF 200 min typ max -50 -50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance
- h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 1 Power Transistors PC - Ta 80 2SB1371 IC - VCE -6 TC=25˚C -5 -5 -6 VCE=-5V IC - VBE Collector power dissipation PC (mW) 70 60 50 Collector current IC (A) -4 -100mA -80mA Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=
