LGE 2SC2717
NPN Transistor
| Part No. | 2SC2717 |
|---|---|
| Datasheet | 2SC2717 Download |
| Manufacturer |  LGE |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE.MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 Collector cut-off current ICBO VCB=30V,IE=0 Emitter cut-off current IEBO VEB=3V,IC=0 DC current gain hFE VCE=12.5V,IC=12.5mA Collector-emitter saturation voltage VCE(sat) IC
