SeCoS Halbleitertechnologie GmbH 2SC2717
NPN Plastic-Encapsulated Transistor
- Max Operating Temp : 125°C
Source:
Octopart
FEATURES
●● TO-92 G H High Gain:Gpe=33 dB(Typ.)(f =45MHz) Good Linearity of hFE J A B K D Base Emitter
●Collector REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 E C F Collector
● Base Emitter
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 30 25 4 50 300 125, -55~125 Unit V V V mA mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation voltage Transition Frequency Collector Output Capacitance Collector to Base Time Constant Power Gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob CC.rbb’ Gpe Min.