LGE MMBD1501A
High Conductance Low Leakage Diode
| Part No. | MMBD1501A |
|---|---|
| Datasheet | MMBD1501A Download |
| Manufacturer |  LGE |
| Description | High Conductance Low Leakage Diode |
| Buy | Stock & Price |
FEATURES
Two element incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.APPLICATIONS
For general application. Dimensions in inches and (millimeters) MMBD1501A MMBD1503A Ordering Information Type No. Marking MMBD1501A MMBD1503A MMBD1504A MMBD1505A A11 A13 A14 A15 MMBD1504A MMBD1505A Package Code SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Reverse Voltage VR 200 Average rectified current VF(AV) 200 Forward Continuous Current Peak forward current (1.0s) (1.0m) Power Dissipation IFM IFSM Pd 600 1.0 2.0 350 Thermal resistance,Junction to ambient RθJA 357 Storage temperature TSTG -55-150 Unit V mA mA A mW ℃/W ℃ mail:lge@luguang.cn MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage DiodeELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown Voltage Forward voltage Reverse current Diode Capacitance Symbol V(BR)R1 VF Min.
