Rectron Semiconductor MMBD1501A
LOW LEAKAGE DIODE
FEATURES
Low Leakage High Conductance MARKING: A11 SOT-23 A11 A11 Solid dot = Green molding compound device,if none,the normal device.MAXIMUM RATINGS
( Ta=25ć unless otherwise noted ) Symbol Parameter VR DC Blocking Voltage IO Continuous Forward Current IFM Peak Forward Current IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms PD Power Dissipation RθJA Thermal Resistance from Junction to Ambient Tj Junction Temperature Tstg Storage Temperature Value 200 200 700 2.0 350 357 150 -55~+150 Unit V mA mA A mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25ć unless otherwise specified) Parameter Reverse voltage Reverse current Forward voltage Total capacitance Symbol V(BR) IR VF Ctot Test conditions IR=5μA VR=180V IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0V,f=1MHz Min Typ Max 200 10 0.75 0.85 0.95 1.1 1.3 1.5 4 Unit V nA V pF 2016-07 REV: O2 FORWARD CURRENT I (mA) F RATING AND CHARACTERISTICS CURVES ( MMBD1501A ) F