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FEATURES
LOW DRIFT ULTRA LOW LEAKAGE
IΔVGS1-2/ΔT│=5µV/°C max. IG=150fA TYP.
LOW PINCHOFF
VP=2V TYP.
ABSOLUTE MAXIMUM RATINGS1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55 to +150°C
Operating Junction Temperature
-55 to +150°C
Maximum Voltage and Current for Each Transistor1
-VGSS Gate Voltage to Drain or Source 40V
-IG(f) Gate Forward Current
10mA
-IG
Gate Reverse Current
Maximum Power Dissipation
Device Dissipation @ TA=25ºC - Total
10µA 500mW2
LS5905 LS5906 LS5907 LS5908 LS5909
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL
JFET AMPLIFIER
Case & Body
Top View SOIC
Top View TO-78
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
SYMBOL
CHARACTERISTIC
LS5906 LS5907 LS5908 LS5909 LS5905 UNITS
│∆VGS1-2/∆T│max. Drift vs.
LS5905 Datasheet
