LINEAR SYSTEMS LS841
DUAL N-CHANNEL JFET AMPLIFIER
| Part No. | LS841 |
|---|---|
| Datasheet | LS841 Download |
| Manufacturer |  LINEAR SYSTEMS |
| Description | DUAL N-CHANNEL JFET AMPLIFIER |
| Buy | Stock & Price |
FEATURES
LOW NOISE en=8nV/Hz TYP. LOW LEAKAGE IG=10pA TYP. LOW DRIFT I VGS1-2/TI=5µV/ºC max. LOW OFFSET VOLTAGE IVGS1-2I=2mV TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature -55°C to +150°C Operating Junction Temperature -55°C to +150°C Maximum Voltage and Current for Each Transistor1 -VGSS Gate Voltage to Drain or Source 60V IG(f) Gate Forward Current Maximum Power Dissipation 10mA Device Dissipation2 @ Free Air - Total 400mW TA=+25°C SOIC TOP VIEW TO-71/78 TOP VIEWELECTRICAL CHARACTERISTICS
@ 25ºC (unless otherwise noted) SYMBOL CHARACTERISTIC LS840 LS841 LS842 UNITS I VGS1-2 / TI max. Drift vs. Temperature 5 10 40 µV/ºC IVGS1-2I max. Offset Voltage 5 10 25 mA CONDITIONS VDG = 20V TA = -55ºC to +125ºC VDG = 20V ID = 200µA ID = 200µA SYMBOL BVGSS BVGGO Gfss Gfs Gfs1│4 Gfs2│ IDSS IDSS1│4 IDSS2│ VGS(off) VGS -IG -IG -IG -IGSS CHARACTERISTIC3 Breakdown Voltage Gate-to-Gate Breakdown TRANSCONDUCTANCE Full Conduction Typical Conductio...