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LS841 - DUAL N-CHANNEL JFET AMPLIFIER

Download the LS841 datasheet PDF. This datasheet also covers the LS840 variant, as both devices belong to the same dual n-channel jfet amplifier family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • LOW NOISE en=8nV/Hz TYP. LOW.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LS840-LINEARSYSTEMS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LS841
Manufacturer LINEAR SYSTEMS
File Size 233.55 KB
Description DUAL N-CHANNEL JFET AMPLIFIER
Datasheet download datasheet LS841 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LS840 LS841 LS842 LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES LOW NOISE en=8nV/Hz TYP. LOW LEAKAGE IG=10pA TYP. LOW DRIFT I VGS1-2/TI=5µV/ºC max. LOW OFFSET VOLTAGE IVGS1-2I=2mV TYP. ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature -55°C to +150°C Operating Junction Temperature -55°C to +150°C Maximum Voltage and Current for Each Transistor1 -VGSS Gate Voltage to Drain or Source 60V IG(f) Gate Forward Current Maximum Power Dissipation 10mA Device Dissipation2 @ Free Air - Total 400mW TA=+25°C SOIC TOP VIEW TO-71/78 TOP VIEW ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted) SYMBOL CHARACTERISTIC LS840 LS841 LS842 UNITS I VGS1-2 / TI max. Drift vs.