LS841 - Low Drift Monolithic Dual JFET

Micross

Key Features

a 10mV offset and 10-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information).

LS841 low drift monolithic dual jfet by Micross - Datasheet Preview

Datasheet Details

Part number	LS841
Manufacturer	Micross
File Size	294.89 KB
Description	Low Drift Monolithic Dual JFET
Datasheet	LS841 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
LS841	DUAL N-CHANNEL JFET AMPLIFIER	LINEAR SYSTEMS
LS840	DUAL N-CHANNEL JFET AMPLIFIER	LINEAR SYSTEMS
LS842	DUAL N-CHANNEL JFET AMPLIFIER	LINEAR SYSTEMS
LS80C52	(LS80C5x) CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER	Intel Corporation
LS80C54	(LS80C5x) CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER	Intel Corporation

Other Datasheets by Micross

Part Number	Description
LS840	Low Drift Monolithic Dual JFET
LS842	Low Drift Monolithic Dual JFET
LS843	Low Drift Monolithic Dual JFET
LS844	Low Drift Monolithic Dual JFET
LS845	Low Drift Monolithic Dual JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

LS841 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS841 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS841 features a 10mV offset and 10-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES LOW DRIFT | V GS1‐2 / T| ≤10µV/°C LOW LEAKAGE IG = 10pA TYP. LOW NOISE en = 8nV/√Hz TYP.