LS845
LS845 is Low Drift Monolithic Dual JFET manufactured by Micross.
Features a 15m V offset and 25-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Features
LOW DRIFT | V GS1‐2 / T| ≤25µV/°C LOW LEAKAGE IG = 15p A TYP. LOW NOISE en = 3n V/√Hz TYP. LOW OFFSET VOLTAGE | V GS1‐2| ≤15m V ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor - Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50m A Maximum Power Dissipation Device Dissipation @ Free Air - Total 400m W @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 25 µV/°C VDG=10V, ID=500µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 15 m V VDG=10V, ID=500µA MAX. ‐‐ ‐‐ ‐‐ ‐‐ 3 15 5 3.5 3.5 50 50 30 100 20 2 0.2 ‐‐ ‐‐ 0.5 7 11 8 3 ‐‐ UNITS V V µmho µmho % m A % V V p A n A p A p A µmho µmho µmho d B CONDITIONS VDS = 0 ID=1n A I G= 1n A ID= 0 IS= 0 VDG= 15V VGS= 0V f = 1k Hz VDG= 15V ID= 500µA VDG= 15V VGS= 0V VDS= 15V ID= 1n A VDS=15V ID=500µA VDG= 15V ID= 500µA TA= +125°C VDG = 3V ID= 500µA VDG= 15V , VDS =0 VDG= 15V VGS= 0V VDG= 15V ID= 500µA
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LS845 Applications:
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- - Wideband Differential Amps High-Speed,Temp-pensated Single Ended Input Amps High-Speed parators Impedance Converters and vibrations detectors.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVGSS Breakdown Voltage 60 ‐‐ BVGGO ...
