LS842 - Low Drift Monolithic Dual JFET

Micross

Key Features

a 25mV offset and 40-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information).

LS842 low drift monolithic dual jfet by Micross - Datasheet Preview

Datasheet Details

Part number	LS842
Manufacturer	Micross
File Size	295.78 KB
Description	Low Drift Monolithic Dual JFET
Datasheet	LS842 Datasheet

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LS842 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS842 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS842 features a 25mV offset and 40-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES LOW DRIFT | V GS1‐2 / T| ≤40µV/°C LOW LEAKAGE IG = 10pA TYP. LOW NOISE en = 8nV/√Hz TYP.