LS842
LS842 is Low Drift Monolithic Dual JFET manufactured by Micross.
Features a 25m V offset and 40-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Features
LOW DRIFT | V GS1‐2 / T| ≤40µV/°C LOW LEAKAGE IG = 10p A TYP. LOW NOISE en = 8n V/√Hz TYP. LOW OFFSET VOLTAGE | V GS1‐2| ≤25m V ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor - Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50m A Maximum Power Dissipation Device Dissipation @ Free Air - Total 400m W @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 40 µV/°C VDG=20V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 25 m V VDG=20V, ID=200µA TYP. 60 ‐‐ ‐‐ ‐‐ 0.6 2 1 2 ‐‐ 10 ‐‐ 5 ‐‐ ‐‐ 0.1 0.01 100 75 ‐‐ ‐‐ ‐‐ 4 1.2 0.1 MAX. ‐‐ ‐‐ 4000 1000 3 5 5 4.5 4 50 50 ‐‐ 100 10 1 0.1 ‐‐ ‐‐ 0.5 10 15 10 5 ‐‐ UNITS V V µmho µmho % m A % V V p A n A p A p A µmho µmho µmho d B CONDITIONS VDS = 0 ID=1n A I G= 1n A ID= 0 IS= 0 VDG= 20V VGS= 0V f = 1k Hz VDG= 20V ID= 200µA VDG= 20V VGS= 0V VDS= 20V ID= 1n A VDS=20V ID=200µA VDG= 20V ID= 200µA TA= +125°C VDG = 10V ID= 200µA VDG= 20V , VDS =0 VDG= 20V VGS= 0V VDG= 20V ID= 200µA
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LS842 Applications:
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- - Wideband Differential Amps High-Speed,Temp-pensated Single Ended Input Amps High-Speed parators Impedance Converters and vibrations detectors.
ELECTRICAL CHARACTERISTICS...
