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LS840 - Low Drift Monolithic Dual JFET

Key Features

  • a 5mV offset and 5-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information).

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Datasheet Details

Part number LS840
Manufacturer Micross
File Size 295.29 KB
Description Low Drift Monolithic Dual JFET
Datasheet download datasheet LS840 Datasheet

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LS840 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS840 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS840 features a 5mV offset and 5-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES  LOW DRIFT  | V GS1‐2 / T| ≤5µV/°C  LOW LEAKAGE  IG = 10pA TYP.  LOW NOISE  en = 8nV/√Hz TYP.  LOW OFFSET VOLTAGE  | V GS1‐2|= 2mV TYP.