FEATURES
LOW DRIFT | V GS1‐2 / T| ≤5µV/°C LOW LEAKAGE IG = 10pA TYP. LOW NOISE en = 8nV/√Hz TYP. LOW OFFSET VOLTAGE | V GS1‐2|= 2mV TYP. ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 5 µV/°C VDG=20V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 5 mV VDG=20V, ID=200µA TYP. 60 ‐‐ ‐‐ ‐‐ 0.6 2 1 2 ‐‐ 10 ‐‐ 5 ‐‐ ‐‐ 0.1 0.01 100 75 ‐‐ ‐‐ ‐‐ 4 1.2 0.1 MAX. ‐‐ ‐‐ 4000 1000 3 5 5 4.5 4 50 50 ‐‐ 100 10 1 0.1 ‐‐ ‐‐ 0.5 10 15 10 5 ‐‐ UNITS V V µmho µmho % mA % V V pA nA pA pA µmho µmho µmho dB COND...
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