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LS840 LS841 LS842
LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL
N-CHANNEL JFET AMPLIFIER
FEATURES
LOW NOISE
en=8nV/Hz TYP.
LOW LEAKAGE
IG=10pA TYP.
LOW DRIFT
I VGS1-2/TI=5µV/ºC max.
LOW OFFSET VOLTAGE
IVGS1-2I=2mV TYP.
ABSOLUTE MAXIMUM RATINGS1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55°C to +150°C
Operating Junction Temperature
-55°C to +150°C
Maximum Voltage and Current for Each Transistor1
-VGSS Gate Voltage to Drain or Source 60V
IG(f) Gate Forward Current Maximum Power Dissipation
10mA
Device Dissipation2 @ Free Air - Total 400mW TA=+25°C
SOIC TOP VIEW
TO-71/78 TOP VIEW
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
SYMBOL
CHARACTERISTIC
LS840 LS841 LS842 UNITS
I VGS1-2 / TI max. Drift vs.