LS843 Datasheet PDF

Micross LS843

The LS843 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS843 features a 1mV offset and 5-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation.

Part No.	LS843
Datasheet	LS843 Download
Manufacturer	Micross
Description	Low Drift Monolithic Dual JFET
Buy	Stock & Price

FEATURES

LOW DRIFT | V GS1‐2 / T| ≤5µV/°C LOW LEAKAGE IG = 15pA TYP. LOW NOISE en = 3nV/√Hz TYP. LOW OFFSET VOLTAGE | V GS1‐2| ≤1mV

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor – Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device Dissipation @ Free Air – Total 400mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 5 µV/°C VDG=10V, ID=500µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 1 mV VDG=10V, ID=500µA MAX. ‐‐ ‐‐ ‐‐ ‐‐ 3 15 5 3.5 3.5 50 50 30 100 20 2 0.2 ‐‐ ‐‐ 0.5 7 11 8 3 ‐‐ UNITS V V µmho µmho % mA % V V pA nA pA pA µmho µmho µmho dB CONDITIONS VDS = 0 ID=1nA I G= 1nA ID= 0 IS= 0 VDG= 15V VGS= 0V f = 1kHz VDG= 15V ID= 500µA...