Datasheet Summary
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GaAlAs T-1 3/ 4 Standard 5 Infrared Emitting Diode
LTE-4238/LTE-4238C/LTE-5238A/LTE-5238AC
Features
Selected to specific on-line intensity and radiant intensity ranges. High power out put. Mechanically and spectrally matched to the LTR-3208 series of phototransistor. Wavelength is 880nm.
Package Dimensions
LTE-4238/LTE-4238C
Description
The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide Features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers...