Datasheet Summary
LESHAN RADIO PANY, LTD.
High-Frequency Amplifier Transistor z Features
1.High transition frequency.(Typ.fT=3.2GHz) 2.Small rbb`Cc and high gain.(Typ.4ps)
3.Small NF. 4.We declare that the material of product pliance with RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-base voltage
VEBO
Collector Current
50 mA
Collector power dissipation
Junction temperature
Tj
°C
Storage temperature
Tstg
-55~+150
°C
DEVICE MARKING L2SC3838NLT1G=APN z ORDERING INFORMATION
Device L2SC3838NLT1G L2SC3838NLT3G
Package...