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LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier Transistor
z Features 1.High transition frequency.(Typ.fT=3.2GHz) 2.Small rbb`Cc and high gain.(Typ.4ps)
3.Small NF. 4.We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
11
V
Emitter-base voltage
VEBO
3
V
Collector Current
IC
50
mA
Collector power dissipation
PC
0.
L2SC3838NLT1G Datasheet
