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L2SC3838QLT3G - High-Frequency Amplifier Transistor

Download the L2SC3838QLT3G datasheet PDF. This datasheet also covers the L2SC3838QLT1G variant, as both devices belong to the same high-frequency amplifier transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1.High transition frequency. (Typ. fT=3.2GHz) 2.Small rbb`Cc and high gain. (Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (L2SC3838QLT1G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number L2SC3838QLT3G
Manufacturer Leshan Radio Company
File Size 71.64 KB
Description High-Frequency Amplifier Transistor
Datasheet download datasheet L2SC3838QLT3G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=3.2GHz) 2.Small rbb`Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 4.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 20 Collector-Emitter Voltage VCEO 11 Emitter-base voltage VEBO 3 Collector Current IC 50 Collector power dissipation PC 0.