LBAS40BST5G
LBAS40BST5G is SCHOTTKY BARRIER DIODE manufactured by LRC.
LESHAN RADIO PANY, LTD.
SCHOTTKY BARRIER DIODE
Features
Low forward current Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes.
DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. We declare that the material of product pliance with Ro HS requirements.
LBAS40BST5G S-LBAS40BST5G
SOD882
1 Cathode
2 Anode
ORDERING INFORMATION
Device
LBAS40BST1G S-LBAS40BST1G
LBAS40BST3G S-LBAS40BST3G
LBAS40BST5G S-LBAS40BST5G
Marking U U U
Shipping 5000/Tape&Reel 8000/Tape&Reel 10000/Tape&Reel
Rev.A 1/4
LESHAN RADIO PANY, LTD.
LBAS40BST5G , S-LBAS40BST5G
MAXIMUM RATINGS (TA = 25°C) Parameter
Continuous reverse voltage Continuous forward current Repetitive Peak forward surge current Non-repetitive peak forward current Storage temperature Junction temperature Operating ambient temperature
Symbol VR IF IFSM IFSM Tstg Tj Tamb
Min. -65 -65
Max. 40 120 120 200
+150 150 +150
Unit V m A m A m A °C °C °C
Conditions tp<1s;δ<0.5 tp<10ms
ELECTRICAL CHARACTERISTICS(TA =...
