LBAS16LT1G Description
LBAS16LT1G Switching Diode.
LBAS16LT1G Key Features
- We declare that the material of product pliance with RoHS requirements and Halogen Free
- 55~+150
- (VR=25V, TJ = 150°C)
- Reverse Breakdown Voltage (IBR = 100 µA)
- (IF =10mA)
- (IF =50mA)
- (IF =150mA)
- Diode capacitance (f=1MHz,VR =0)
- Forward Recovery Voltage (IF = 10 mA, tr = 20ns)
- Reverse Recovery Time (IF = IR = 10mA, RL = 50Ω)