LBAS16TT1G
LBAS16TT1G is Silicon Switching Diode manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
Silicon Switching Diode
FEATURE z We declare that the material of product pliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBAS16TT1G S-LBAS16TT1G
MAXIMUM RATINGS (TA = 25oC)
Rating
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current Pulse Width = 10 µs
Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm)
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient One...
