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LBAS16TT3G - Silicon Switching Diode

Download the LBAS16TT3G datasheet PDF. This datasheet also covers the LBAS16TT1G variant, as both devices belong to the same silicon switching diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (LBAS16TT1G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LBAS16TT3G
Manufacturer Leshan Radio Company
File Size 221.08 KB
Description Silicon Switching Diode
Datasheet download datasheet LBAS16TT3G Datasheet

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Other Datasheets by Leshan Radio Company

Part Number Description
LBAS16TT1G Silicon Switching Diode
LBAS16TW1T1G SURFACE MOUNT FAST SWITCHING DIODE
LBAS16HT1 Switching Diode
LBAS16LT1 Switching Diode
LBAS16WT1 Switching Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAS16TT1G S-LBAS16TT1G MAXIMUM RATINGS (TA = 25oC) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.