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LBAS16TT3G - Silicon Switching Diode

This page provides the datasheet information for the LBAS16TT3G, a member of the LBAS16TT1G Silicon Switching Diode family.

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Datasheet Details

Part number LBAS16TT3G
Manufacturer Leshan Radio Company
File Size 221.08 KB
Description Silicon Switching Diode
Datasheet download datasheet LBAS16TT3G Datasheet
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LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAS16TT1G S-LBAS16TT1G MAXIMUM RATINGS (TA = 25oC) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.
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