LBAS16WT1G
LBAS16WT1G is Switching Diode manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
Silicon Switching Diode
FEATURE z We declare that the material of product pliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25oC)
Rating
Symbol
Max
Continuous Reverse Voltage
VR 75
Recurrent Peak Forward Current
IR 200
Peak Forward Surge Current Pulse Width = 10 µs
IFM(surge)
Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
200 1.6
Operating and Storage Junction Temperature Range
TJ, Tstg
- 55 to +150
THERMAL...
