LBAS16WT1
LBAS16WT1 is Switching Diode manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
Silicon Switching Diode
MAXIMUM RATINGS (TA = 25oC)
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs
Symbol VR IR
IFM(surge)
Max 75 200 500
Total Power Dissipation, One Diode Loaded
TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
200 1.6
Operating and Storage Junction Temperature Range
TJ, Tstg
- 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm)
Symbol RθJA
Max 0.625
DEVICE MARKING
LBAS16WT1 = A6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise...
