LBSS138DW1T1G - Power MOSFET

Datasheet Summary

Features

We declare that the material of product compliance with RoHS requirements and Halogen Free.
S- prefix for automotive and other.

LRC

📥 Download Datasheet

LBSS138DW1T1G Power MOSFET by LRC - Datasheet Preview — Datasheet preview – LBSS138DW1T1G

Datasheet Details

Part number	LBSS138DW1T1G
Manufacturer	LRC
File Size	451.22 KB
Description	Power MOSFET
Datasheet	LBSS138DW1T1G Datasheet
Additional preview pages of the LBSS138DW1T1G datasheet.

📁 Similar Datasheet

LBSS138LT1G - Power MOSFET (Leshan Radio Company)
LBSS138LT3G - Power MOSFET (Leshan Radio Company)
LBSS138WT1G - Power MOSFET (Leshan Radio Company)
LBSS138WT3G - Power MOSFET (Leshan Radio Company)
LBSS139LT1G - N-Channel MOSFET (VBsemi)
LBSS123LT1G - N-CHANNEL POWER MOSFET (Leshan Radio Company)
LBSS123LT3G - N-CHANNEL POWER MOSFET (Leshan Radio Company)
LBSS84LT - Power MOSFET (Leshan Radio Company)
LBSS84LT1 - Power MOSFET (Leshan Radio Company)
LBSS84LT1G - Power MOSFET (Leshan Radio Company)

Other Datasheets by LRC

LBSS138V3.3T1G - Dual Integrated Circuit N-Channel/PN Duals
LBSS139LT1G - Power MOSFET
LBSS4240LT1G - General Purpose Transistors
LBSS8402DW1T1G - Power MOSFET
LBSS8402DW1T3G - Power MOSFET
LBSS84DW1T1G - Power MOSFET
LBS138V3.3T1G - Dual Integrated Circuit N-Channel/PN Duals

Full PDF Text Transcription

Click to expand full text

LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ● Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS138DW1T1G J1 3000/Tape&Reel LBSS138DW1T3G J1 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Drain–Source Voltage Gate–to–Source Voltage – Continuous Drain Current – Continuous TA = 25°C – Pulsed (tp≤10μs) Symbol VDSS VGS ID IDM Limits 50 ±20 200 800 Unit Vdc Vdc mAdc 4.

Published: Sep 7, 2018 |