LRC MBD701
Silicon Hot-Carrier Diodes
| Part No. | MBD701 |
|---|---|
| Datasheet | MBD701 Download |
| Manufacturer |  LRC |
| Description | Silicon Hot-Carrier Diodes |
| Buy | Stock & Price |
MAXIMUM RATINGS
(T J = 125°C unless otherwise noted) MBD701 Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 T J MMBD701LT1 Value 70 200 2.0 Unit Volts mW mW/°C °C °C T stg –55 to +125 –55 to +150 DEVICE MARKING MMBD701LT1 = 5HELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R Symbol V (BR)R CT I V V R F F Min 70 — — — — typ — 0.5 9.0 0.42 0.7 Max — 1.0 200 0.5 1.0 Unit Volts pF nAdc Vdc Vdc = 10µAdc) Total Capacitance (V R = 20 V, f = 1.0 MHz) Figure 1 Reverse Leakage (V R = 35 V) Figure 3 Forward Voltage (I F = 1.0 mAdc) Figure 4 Forward Voltage (I F = 10 mAdc) Figure 4 NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk. G18–1/2 LESHAN RADIO COMPANY, LTD. MBD701 MMBD701LT1 TYPICALELECTRICAL CHARACTERISTICS
2.0 f =1.0MHz 1.6 τ , MINORITY CARRIER LIF...