onsemi MBD701
Silicon Hot-Carrier Diodes Schottky Barrier Diodes
FEATURES
MARKING DIAGRAMS TO−92 2−Lead CASE 182 STYLE 1 1 2 2 CATHODE 1 ANODE●
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● Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.0 pF @ VR = 20 V High Reverse Voltage − to 70 V Low Reverse Leakage − 200 nA (Max) Pb−Free Packages are Available MBD 701 AYWW G G
MAXIMUM RATINGS
Rating Reverse Voltage Forward Power Dissipation MBD701 @ TA = 25°C MMBD701LT Derate above 25°C MBD701 MMBD701LT TJ Tstg Symbol VR PF 280 200 2.8 2.0 −55 to +125 −55 to +150 mW mW/°C °C °C Value 70 Unit V 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 6 1 ANODE 5H M G G 1 3 CATHODE Operating Junction Temperature Range Storage Temperature Range Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week 5H = Device Code (SOT...