MMVL105GT1
MMVL105GT1 is Silicon Tuning Diode manufactured by LRC.
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LESHAN RADIO PANY, LTD.
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid- state reliability in replacement of mechanical tuning methods.
- Controlled and Uniform Tuning Ratio
- Device Marking: M4E 30 VOLT VOLTAGEVARIABLE CAPACITANCE DIODES
ORDERING INFORMATION
Device MMVL105GT1 Package SOD- 323 Shipping 3000 / Tape & Reel
PLASTIC, CASE 477 SOD- 323
1 CATHODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR-5 Board,- TA = 25°C Derate above 25°C RθJA TJ, Tstg
- FR- 4 Minimum Pad Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 28 Vdc) Ct VR = 25 Vdc, f = 1.0 MHz p F Device Type MMVL105T1 Min 1.5 Max 2.8 Q VR = 3.0 Vdc f = 50 MHz Typ 250 Min 4.0 CR, C3/C25 f = 1.0 MHz Max 6.5 IR
- 50 n Adc Themal Resistance Junction to Ambient Junction and Storage Temperature 1.57 635 150 m W/°C °C/W °C Value 30 200 Max 200 Unit Vdc m Adc Unit m W
2 ANODE
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol V(BR)R Min 30 Max
- Unit Vdc
MMVL105GT1- 1/2
LESHAN RADIO PANY, LTD.
TYPICAL CHARACTERISTICS
20 18 CT , DIODE CAPACITANCE (p F) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 f = 1.0 MHz TA = 25°C
VR = 3 Vdc TA = 25°C 100
100 f, FREQUENCY (MHz)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96
- 75
- 50
- 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
MMVL105GT1-...
