MMVL105GT1
MMVL105GT1 is VOLTAGE VARIABLE CAPACITANCE DIODE manufactured by onsemi.
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Preferred Device
Silicon Tuning Diode
This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid- state reliability in replacement of mechanical tuning methods.
- Controlled and Uniform Tuning Ratio
- Device Marking: 4E http://onsemi.
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
MAXIMUM RATINGS
Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current Value 30 200 Unit Vdc m Adc
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation FR- 5 Board,- TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Max 200 1.57 635 150 Unit m W m W/°C °C/W °C
PLASTIC SOD- 323 CASE 477
Rq JA TJ, Tstg
- FR- 4 Minimum Pad
1 CATHODE
2 ANODE
ORDERING INFORMATION
Device MMVL105GT1 Package SOD- 323 Shipping 3000 / Tape & Reel
Preferred devices are remended choices for future use and best overall value.
© Semiconductor ponents Industries, LLC, 2000
January, 2000
- Rev. 1
Publication Order Number: MMVL105GT1/D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 28 Vdc) CT VR = 25 Vdc, f = 1.0 MHz p F Min MMVL105GT1 1.5 Max 2.8 Symbol Min V(BR)R IR Typ 30
- Max
- 50 Unit Vdc n Adc
Device Type
Q VR = 3.0 Vdc f = 50 MHz Typ 250 Min 4.0
CR C3/C25 f = 1.0 MHz Max 6.5
TYPICAL CHARACTERISTICS
20 18 CT , DIODE CAPACITANCE (p F) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 10 10 100 f, FREQUENCY (MHz) 1000 f = 1.0 MHz TA = 25°C VR = 3 Vdc TA = 25°C 100 1000
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97...
