MMVL109T1 Datasheet | LRC

.. LESHAN RADIO PANY, LTD. Silicon Epicap Diode Designed for general frequency control and tuning applications; providing solid- state reliability in replacement of mechnaical tuning methods. 26- 32 p F VOLTAGEVARIABLE CAPACITANCE DIODES - High Q with Guaranteed Minimum Values at VHF Frequencies - Controlled and Uniform Tuning Ratio - Surface Mount Package - Device Marking: 4A PLASTIC, CASE 477 SOD- 323 ORDERING INFORMATION Device MMVL109T1 Package SOD- 323 Shipping 3000 / Tape & Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR- 5 Board,- TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Value 30 200 Max 200 1.57 635 -55 to +150 Unit Vdc m Adc Unit m W m W/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg - FR- 5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current Symbol V(BR)R Min 30 Typ - Max - Unit Vdc IR TCC - - - 300 - µAdc ppm/°C (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc p F f = 50 MHz Device Min Nom Max Min MMVL109T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. CR, Capacitance Ratio C3/C25 f = 1.0 MHz(Note 1) Min Max 5.0 6.5 MMVL109T1- 1/2 LESHAN RADIO PANY, LTD. TYPICAL CHARACTERISTICS 40 36 Q, FIGURE OF MERIT 32 CT , CAPACITANCE - p F 28 24 20 16 12 8 4 0 1 3 10 30 100 f = 1.0 MHz TA = 25°C VR = 3 Vdc TA = 25°C...