MMVL109T1
MMVL109T1 is Silicon Epicap Diodes manufactured by onsemi.
Features
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High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Pb- Free Package is Available http://onsemi.
26- 32 p F VOLTAGE VARIABLE CAPACITANCE DIODES
1 CATHODE 2 ANODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 30 200 Unit Vdc m Adc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction- to- Ambient Junction and Storage Temperature Range Symbol PD 200 1.57 Rq JA TJ, Tstg 635 m W m W/°C °C/W °C Max Unit
1 PLASTIC SOD- 323 CASE 477 STYLE 1
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- 55 to +150
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR- 5 Minimum Pad
MARKING DIAGRAM
4A M G G
4A = Device Code M = Date Code- G = Pb- Free Package (Note: Microdot may be in either location)
- Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device MMVL109T1 MMVL109T1G Package Shipping †
SOD- 323 3000 / Tape & Reel SOD- 323 3000 / Tape & Reel (Pb- Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are remended choices for future use and best overall value.
© Semiconductor ponents Industries, LLC, 2006
February, 2006
- Rev. 1
Publication Order Number: MMVL109T1/D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Reverse Breakdown Voltage (IR = 10 m Adc) Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Ct, Diode Capacitance VR = 3.0 Vdc,...