MMVL3401T1 Datasheet | LRC

.. LESHAN RADIO PANY, LTD. Silicon Pin Diode This device is designed primarily for VHF band switching applications but is also suitable for use in general- purpose switching circuits. Supplied in a Surface Mount package. - Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability - Low Capacitance - 0.7 p F Typ at VR = 20 Vdc - Very Low Series Resistance at 100 MHz - 0.34 Ohms (Typ) @ IF = 10 m Adc - Device Marking: 4D SILICON PIN SWITCHING DIODE PLASTIC, CASE 477 SOD- 323 ORDERING INFORMATION Device MMVL3401T1 Package SOD- 323 Shipping 3000 / Tape & Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR- 5 Board,- TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 20 20 Max 200 1.57 635 150 Unit Vdc m Adc Unit m W m W/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg - FR- 4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Diode Capacitance (VR = 20 Vdc) Series Resistance (IF = 10 m Adc, f =100MHz) Reverse Leakage Current (VR = 25 Vdc) Symbol V(BR)R CT RS IR Min 35 - - - Typ - - - - Max - 1.0 0.7 0.1 Unit Vdc p F Ω µAdc MMVL3401T1- 1/2 LESHAN RADIO PANY, LTD. TYPICAL CHARACTERISTICS I F , FORWARD CURRENT (m A) RS, SERIES RESISTANCE (Ω) I F, FORWARD CURRENT (m A) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage CT, DIODE CAPACITANCE (p...