MMVL3401T1
MMVL3401T1 is Silicon Pin Diode manufactured by onsemi.
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Preferred Device
Silicon Pin Diode
This device is designed primarily for VHF band switching applications but is also suitable for use in general- purpose switching circuits. Supplied in a Surface Mount package.
- Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability
- Low Capacitance 0.7 p F Typ at VR = 20 Vdc
- Very Low Series Resistance at 100 MHz 0.34 Ohms (Typ) @ IF = 10 m Adc
- Device Marking: 4D http://onsemi.
SILICON PIN SWITCHING DIODE
MAXIMUM RATINGS
Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current Value 20 20 Unit
1 2
Vdc m Adc PLASTIC SOD- 323 CASE 477
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation FR- 5 Board,- TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Max 200 1.57 635 150 Unit m W m W/°C °C/W °C
Rq JA TJ, Tstg
- FR- 4 Minimum Pad
1 CATHODE
2 ANODE
ORDERING INFORMATION
Device MMVL3401T1 Package SOD- 323 Shipping 3000 / Tape & Reel
Preferred devices are remended choices for future use and best overall value.
© Semiconductor ponents Industries, LLC, 2001
January, 2000
- Rev. 1
Publication Order Number: MMVL3401T1/D
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Diode Capacitance (VR = 20 Vdc) Series Resistance (Figure 5) (IF = 10 m Adc, f = 100 MHz) Reverse Leakage Current (VR = 25 Vdc) Symbol V(BR)R CT RS IR Min 35
- -
- Typ
- -
- - Max
- 1.0 0.7 0.1 Unit Vdc p F Ω µAdc
TYPICAL CHARACTERISTICS
1.6 R S , SERIES RESISTANCE (OHMS) I F , FORWARD CURRENT (m A) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2.0 4.0 6.0 8.0 10 12 14 16 0 0.5 0.6 0.7 0.8 0.9 1.0 TA = 25°C 50 40 30 TA = 25°C 20 10
IF, FORWARD CURRENT (m A)
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Series Resistance
20 C T , DIODE CAPACITANCE (p F) I R , REVERSE CURRENT ( µA) 10 7.0 5.0 2.0 1.0 0.7 0.5 0.2 +3.0 100 40 10 4.0 1.0 0.4 0.1 0.04...
