MMVL409T1 Datasheet | LRC

.. LESHAN RADIO PANY, LTD. Silicon Tuning Diode These devices are designed for general frequency control and tuning applications. They provide solid- state reliability in replacement of mechanical tuning methods. VOLTAGEVARIABLE CAPACITANCEDIODE - High Q with Guaranteed Minimum Values at VHF Frequencies - Controlled and Uniform Tuning Ratio - Surface Mount Package - Device Marking: X5 1 CATHODE 2 ANODE PLASTIC, CASE 477 SOD- 323 ORDERING INFORMATION Device MMVL409T1 Package SOD- 323 Shipping 3000 / Tape & Reel MAXIMUM RATINGS Symbol VR IF Symbol PD Rating Continuous Reverse Voltage Peak Forward Current Characteristic Total Device Dissipation FR- 5 Board,- TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Value 20 200 Max 200 1.57 635 150 Unit Vdc m Adc Unit m W m W/°C °C/W °C THERMAL CHARACTERISTICS RθJA TJ, Tstg - FR- 4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 - - Typ - - 300 Max - 0.1 - Unit Vdc µAdc ppm/°C Ct, Diode Capacitance Q, Figure of Merit VR = 3.0 Vdc, f = 1.0 MHz VR = 3.0 Vdc p F f = 50 MHz Device Min Nom Max Min MMVL409T1 26 29 32 200 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min Max 1.5 1.9 MMVL409T1- 1/2 LESHAN RADIO PANY, LTD. TYPICAL CHARACTERISTICS CT, DIODE CAPACITANCE (p F) Q, FIGURE OF MERIT VR, REVERSE VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 1. Diode Capacitance C t , DIODE CAPACITANCE (NORMALIZED) Figure 2. Figure of Merit I R, REVERSE CURRENT (n A) TA,AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE...