MMVL409T1 Datasheet | onsemi

.. Preferred Device Silicon Tuning Diode These devices are designed for general frequency control and tuning applications. They provide solid- state reliability in replacement of mechanical tuning methods. - High Q with Guaranteed Minimum Values at VHF Frequencies - Controlled and Uniform Tuning Ratio - Surface Mount Package - Device Marking: X5 http://onsemi. VOLTAGE VARIABLE CAPACITANCE DIODE MAXIMUM RATINGS Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current Value 20 200 Unit Vdc m Adc 1 2 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR- 5 Board,- TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Max 200 1.57 635 150 Unit m W m W/°C °C/W °C PLASTIC SOD- 323 CASE 477 Rq JA TJ, Tstg - FR- 4 Minimum Pad 1 CATHODE 2 ANODE ORDERING INFORMATION Device MMVL409T1 Package SOD- 323 Shipping 3000 / Tape & Reel Preferred devices are remended choices for future use and best overall value. © Semiconductor ponents Industries, LLC, 2000 January, 2000 - Rev. 1 Publication Order Number: MMVL409T1/D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 - - Typ - - 300 Max - 0.1 - Unit Vdc µAdc ppm/°C Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz p F Device MMVL409T1 Min 26 Nom 29 Max 32 Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min 200 CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min 1.5 Max 1.9 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc. TYPICAL CHARACTERISTICS 40 C T, DIODE CAPACITANCE (p F) 32 24 16 8 0 10 f = 1.0 MHz TA = 25°C 1000 Q, FIGURE OF MERIT VR = 3 Vdc TA = 25°C...