SRK7002LT1G Datasheet | LRC

.. LESHAN RADIO PANY, LTD. Small Signal MOSFET Silicon N-Channel z Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive. 4) Easily designed drive circuits. 5) Easy to parallel. 6) Pb-Free package is available. 7) ESD Protected:2000V 1 2 SOT-23 (TO-236AB) 3 d z Device Marking and Ordering Information Device SRK7002LT1G SRK7002LT3G Marking RK RK Shipping 3000 Tape & Reel 10000 Tape & Reel 1 g s 2 z $EVROXWHPD[LPXPUDWLQJV7D °& Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Continuous Drain reverse current Pulsed Symbol VDSS VGSS ID IDP∗1 IDR IDRP∗1 PD∗2 Tch Tstg Limits 60 ±20 115 0.8 115 0.8 225 150 - 55~+150 Unit V V m A A m A A m W °C °C Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a 1×0.75×0.062 inch glass epoxy board. 1/4 .. LESHAN RADIO PANY, LTD. z(OHFWULFDOFKDUDFWHULVWLFV7D °& Parameter Gate-source leakage current Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Symbol IGSS V (BR) DSS IDSS VGS (th) Min. - 60 - 1 - - 80 - - - - - Typ. - - - 1.85 - - - 25 10 3.0 12 20 Max. ±10 - 1 2.5 7.5 7.5 - 50 25 5.0 20 30 Unit µA V µA V Ω m S p F p F p F ns ns Test Conditions VGS=±20V, VDS=0V ID=10µA, VGS=0V VDS=60V, VGS=0V VDS=VGS , ID=250u A ID=0.5A, VGS=10V ID=0.05A, VGS=5V VDS=10V, ID=0.2A VDS=25V VGS=0V f=1MHz ID=200m A, VDD 30V VGS=10V, RL=150Ω ,RGS=10Ω Drain-source on-state resistance RDS (on)∗ Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-off delay time ∗ PW≤300µs, Duty cycle≤1% l Yfs l∗ Ciss Coss Crss td (on)∗ td (off)∗ z(OHFWULFDOFKDUDFWHULVWLF curve V 2/4 .. LESHAN RADIO PANY, LTD. SRK7002LT1G z(OHFWULFDOFKDUDFWHULVWLF curve V (continues) z Switching FKDUDFWHULVWLFs measurement...