MBR4045 Datasheet PDF

FEATURES

* High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency

MAXIMUM RATINGS

* Operating Junction Temperature: 150°C * Storage Temperature: - 55 °C to +175°C * Per diode Thermal Resistance 2.2°C/W Junction to Case

MECHANICAL DATA

* Case: Molded Plastic * Terminals: Plated Lead Solderable per MIL-STD-202, Method 208 * Marking:Type Number * Weight: 6 grams (approx) LTO-DMS Semiconductor Corporation 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 Fax:(718) 234 6013 / (707) 3223 6696 TO-3P Millimeter Dim Min.. Max A 4.70 B 2.79 C 1.50 D 1.00 E 2.00 F 3.00 G 0.400 H 21.8 J 15.9 K 5.45 L 20.2 M 4.00 N 3.00 P 6.80 Q 4.44 R 1.72 5.30 3.18 2.50 1.40 2.40 3.40 0.800 22.4 16.5 ---20.6 4.60 3.40 7.62 5.30 2.03 Inches Min. 0.185 0.110 0.059 0.040 0.079 0.118 0.016 0.860 0.627 0.215 0.795 0.157 0.118 0.268 0.175 0.068 Max. 0.209 0.125 0.098 0.055 0.094 0.133 0.031 0.883 0.650 ---0.810 0.