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MBR4045 Key Features

  • Dual Diode Construction
  • Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating
  • 45 Volt Blocking Voltage
  • Low Forward Voltage Drop
  • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns)
  • Guaranteed Reverse Avalanche
  • 150°C Operating Junction Temperature Mechanical Characteristics
  • Case: Epoxy, Molded
  • Weight: 4.3 grams (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

MBR4045 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR4045PT/D Advance Information SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following.