Datasheet Details
| Part number | FX2N7002KMFH-06S3G |
|---|---|
| Manufacturer | LYG |
| File Size | 1.12 MB |
| Description | N-Channel MOSFET |
| Download | FX2N7002KMFH-06S3G Download (PDF) |
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| Part number | FX2N7002KMFH-06S3G |
|---|---|
| Manufacturer | LYG |
| File Size | 1.12 MB |
| Description | N-Channel MOSFET |
| Download | FX2N7002KMFH-06S3G Download (PDF) |
|
|
|
FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits and low in-line power loss are needed in a very small outline surface mount package.
General.
| Part Number | Description |
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