Datasheet Summary
General Description
FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected
The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits and low in-line power loss are needed in a very small outline surface mount package.
PIN Configuration
Features
- RDS(ON) ≦3Ω@VGS=10V
- RDS(ON) ≦4Ω@VGS=4.5V
- RDS(ON) ≦4.5Ω@VGS=3V
- ESD Protection HBM >2KV
-...