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FX2N7002KMFH-06S3G - N-Channel MOSFET

Description

high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦3Ω@VGS=10V.
  • RDS(ON) ≦4Ω@VGS=4.5V.
  • RDS(ON) ≦4.5Ω@VGS=3V.
  • ESD Protection HBM >2KV.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet preview – FX2N7002KMFH-06S3G

Datasheet Details

Part number FX2N7002KMFH-06S3G
Manufacturer LYG
File Size 1.12 MB
Description N-Channel MOSFET
Datasheet download datasheet FX2N7002KMFH-06S3G Datasheet
Additional preview pages of the FX2N7002KMFH-06S3G datasheet.

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    Full PDF Text Transcription

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    General Description FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits and low in-line power loss are needed in a very small outline surface mount package. PIN Configuration Features ● RDS(ON) ≦3Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.5V ● RDS(ON) ≦4.
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