FX2N7002KMFH-06S3G Description
FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power...
FX2N7002KMFH-06S3G Key Features
- RDS(ON) ≦3Ω@VGS=10V
- RDS(ON) ≦4Ω@VGS=4.5V
- RDS(ON) ≦4.5Ω@VGS=3V
- ESD Protection HBM >2KV
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
FX2N7002KMFH-06S3G Applications
- Power Management in Note book