LZG 2SA1376
SILICON PNP TRANSISTOR
FEATURES
: High breakdown voltage, good hFE linearity, complementary to 2SC3478(3DG3478). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit VCBO -200 V VCEO -180 V VEBO -5.0 V IC -100 mA ICP -200 mA IB -20 mA PC 750 mW Tj 150 ℃ Tstg -55~150 ℃ 电性能参数/Electrical characteristics(Ta=25℃) 参数符号 Symbol 测试条件 Test condition ICBO IEBO hFE VCE(sat) VBE(sat) VBE fT Cob ton toff VCB=-200V IE=0 VEB=-4.0V IC=0 VCE=-10V IC=-50mA IC=-50mA VCE=-10V VCE=-10V IC=-10mA IB=-5.0mA IB=-5.0mA IC=-10mA IE=10mA VCB=-30V IF=0 f=1.0MHz IC=-10mA VCC=-10V IB1=-IB2=-1.0mA 最小值 Min 135 -600 80 数值 Rating 典型值 Typ -0.2 -0.8 -