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2SA1376 - PNP Silicon Transistor

Key Features

  • High voltage VCEO:.
  • 180 V /.
  • 200 V (2SA1376/2SA1376A).
  • Excellent hFE linearity.
  • High total power dissipation in small dimension: PT: 0.75 W.
  • Complementary transistor with 2SC3478 and 2SC3478A.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SA1376A PNP Silicon Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension: PT: 0.75 W • Complementary transistor with 2SC3478 and 2SC3478A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) 2SA1376/2SA1376A Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg −200 −180/−200 −5 −100 −200 0.