2SA953M
Key Features
- High total power dissipation, high hFE and high VCEO. 极限参数/ 参数符号 数值 单位 Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO
- 0.15 VBE(sat) IC=-300mA IB=-30mA
- 0.85 VBE VCE=-6.0V IC=-10mA
- Part: 2SA953M
- Description: SILICON PNP TRANSISTOR
- Category: Transistor
- Manufacturer: LZG
- Size: 342.35 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| A953 | NEC | 2SA953 |
| 2SA950 | TRANSYS Electronics | Plastic-Encapsulated Transistors |
| 2SA959 | Inchange Semiconductor | POWER TRANSISTOR |
| 2SA957 | Inchange Semiconductor | POWER TRANSISTOR |
| 2SA952 | SEMTECH | PNP Silicon Epitaxial Planar Transistor |
| 2SA950 | SeCoS Halbleitertechnologie GmbH | PNP Transistor |
| TA8529F | Toshiba | STEPPING MOTOR DRIVER IC (TA8528 + 2SA950 x 4 MCP) |
| 2SA956 | Unknown Manufacturer | PNP SILICON EPITAXIAL TRANSISTOR |
| 2SA958 | Inchange Semiconductor | POWER TRANSISTOR |
| A958 | SavantIC | 2SA958 |