2SB1184 Datasheet Silicon PNP Transistor

Manufacturer: LZG

Overview: 2SB1184(3CA1184) 用途:用于一般功率放大。硅 PNP 半导体三极管/SILICON PNP TRANSISTOR Purpose: Power amplifier applications。特点:饱和压降小,与 2SD1760(3DA1760).

Datasheet Details

Low VCE(sat),complements the 2SD1760(3DA1760). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rating Unit VCBO VCEO VEBO IC PC PC (Tc=25℃) Tj Tstg -60 -50 -5.0 -3.0 1.0 15 150 -55～150 V V V A W W ℃ ℃ 电性能参数/Electrical characteristics(Ta=25℃) 数值参数符号 Symbol 测试条件 Test condition Rating 单位最大值 Max Unit 最小值 Min 典型值 Typ VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob IC=-50μA IC=-1.0mA IE=-50μA VCB=-40V VEB=-4.0V VCE=-3.0V IC=-2.0A IC=-1.5A VCE=-5.0V VCB=-10V IC=-0.5A IE=0.

Part Number	Description	Manufacturer
2SB1184	Power Transistor	Rohm
2SB1184	PNP Transistor	JCET
2SB1184	Silicon PNP Power Transistor	Inchange Semiconductor
2SB1184	Power transistor	Kexin
2SB1184	PNP Transistor	Weitron