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2SB1184 - PNP Transistor

Key Features

  • z Low VCE(sat). VCE(sat) = -0.5V (Typ. ) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864.

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Datasheet Details

Part number 2SB1184
Manufacturer JCET
File Size 796.37 KB
Description PNP Transistor
Datasheet download datasheet 2SB1184 Datasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1184 TRANSISTOR (PNP) FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -3 A PC Collector Power Dissipation 1W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ TO-252-2L 1. BASE 2. COLLECTOR 3.