2SB1184 - Power Transistor

Galaxy Microelectronics

Key Features

z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760. 2SB1184 Pb Lead-free.

2SB1184 power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SB1184
Manufacturer	Galaxy Microelectronics
File Size	209.26 KB
Description	Power Transistor
Datasheet	2SB1184 Datasheet

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Part Number	Description
2SB1185	Power Transistor
2SB1188	Medium power transistor
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Full PDF Text Transcription (Reference)

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Production specification Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1760. 2SB1184 Pb Lead-free APPLICATIONS z z Epitaxial planar type. PNP silicon transistor. TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Collector-Base Volage Value Units VCBO -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -3 A ICP Collector Power Dissipation -4.5 A PC Collector Power Dissipation 1 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W007 Rev.A www.gmicroelec.com 1 Free Datasheet http://www.Datasheet4U.