2SB1189 - Medium power transistor

Galaxy Microelectronics

Key Features

High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A.
Complementary the 2SD1767. Pb Lead-free Production specification 2SB1189.

2SB1189 medium power transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SB1189
Manufacturer	Galaxy Microelectronics
File Size	180.33 KB
Description	Medium power transistor
Datasheet	2SB1189 Datasheet

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Medium power transistor(-80V,-0.7A) FEATURES  High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A.  Complementary the 2SD1767. Pb Lead-free Production specification 2SB1189 ORDERING INFORMATION Type No. Marking 2SB1189 BDP/BDQ/BDR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.7 A PC Collector power dissipation 500 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E044 Rev.A www.gmesemi.com 1 Production specification Medium power transistor(-80V,-0.