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2SB1189

Manufacturer: Galaxy Microelectronics
2SB1189 datasheet preview

Datasheet Details

Part number 2SB1189
Datasheet 2SB1189-GME.pdf
File Size 180.33 KB
Manufacturer Galaxy Microelectronics
Description Medium power transistor
2SB1189 page 2 2SB1189 page 3

2SB1189 Overview

Medium power transistor(-80V,-0.7A).

2SB1189 Key Features

  • High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A
  • plementary the 2SD1767
  • 55 to +150

2SB1189 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
JCET Logo 2SB1189 PNP Transistor JCET
ROHM Logo 2SB1189 Medium power transistor ROHM
Kexin Logo 2SB1189 Medium Power Transistor Kexin
AiT Semiconductor Logo 2SB1189 PNP MEDIUM POWER TRANSISTOR AiT Semiconductor
Galaxy Microelectronics logo - Manufacturer

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