2SB1189 Overview
Key Features
- High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A
- Complementary the 2SD1767. Pb Lead-free Production specification 2SB1189
| Part | 2SB1189 |
|---|---|
| Description | Medium power transistor |
| Category | Transistor |
| Manufacturer | Galaxy Microelectronics |
| Size | 180.33 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SB1189 | AiT Semiconductor | PNP MEDIUM POWER TRANSISTOR |
| 2SB889F | ROHM | Medium Power Transistor |
| 2SB1189 | Kexin Semiconductor | Medium Power Transistor |
| 2SB1189 | JCET | PNP Transistor |
| 2SB1189 | ROHM | Medium power transistor |