• Part: 2SB1189
  • Description: Medium power transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 180.33 KB
Download 2SB1189 Datasheet PDF
Galaxy Microelectronics
2SB1189
2SB1189 is manufactured by Galaxy Microelectronics.
Medium power transistor(-80V,-0.7A) Features - High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A. - plementary the 2SD1767. Pb Lead-free Production specification ORDERING INFORMATION Type No. Marking BDP/BDQ/BDR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.7 A PC Collector power...