2SB1189 Description
Medium power transistor(-80V,-0.7A).
2SB1189 Key Features
- High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A
- plementary the 2SD1767
- 55 to +150
2SB1189 is Medium power transistor manufactured by Galaxy Microelectronics.
| Manufacturer | Part Number | Description |
|---|---|---|
JCET |
2SB1189 | PNP Transistor |
ROHM |
2SB1189 | Medium power transistor |
Kexin Semiconductor |
2SB1189 | Medium Power Transistor |
| 2SB1189 | PNP MEDIUM POWER TRANSISTOR |
Medium power transistor(-80V,-0.7A).