2SB1189 - Medium power transistor

ROHM

Key Features

High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO.
80 Collector-emitter voltage VCEO.
80 Emitter-base voltage VEBO.
5 Collector current IC.
0.7 Collector power dissipation 2SB1189 2SB1238 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg.
55 to +150 ∗1 When mounted on a 40×40×0.

2SB1189 medium power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1189
Manufacturer	ROHM
File Size	89.37 KB
Description	Medium power transistor
Datasheet	2SB1189 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SB1189	Medium power transistor	GME
2SB1189	Silicon PNP transistor	BLUE ROCKET ELECTRONICS
2SB1189	PNP Transistor	HOTTECH
2SB1189	PNP Transistor	JCET
2SB1189	Medium Power Transistor	Kexin

Other Datasheets by ROHM

Part Number	Description
2SB1181	Power Transistor
2SB1182	Medium power Transistor
2SB1183	Power transistor
2SB1184	Power Transistor
2SB1184F5	Epitaxial Planar PNP Silicon Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter-base voltage VEBO −5 Collector current IC −0.7 Collector power dissipation 2SB1189 2SB1238 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.